naina s emiconductor schottky barrier rectifier diode features ? fast switching ? low forward voltage drop, v f ? guard ring protection ? high surge capacity ? high efficiency, low power loss maximum ratings (t c = 25 0 c, unless otherwise noted) parameter maximum instantaneous forward voltage maximum instantaneous reverse current at rated dc v oltage electrical ratings (t c = 25 0 c, unless otherwise noted) parameter symbol repetitive peak reverse voltage v rrm dc blocking voltage v dc non-repetitive peak reverse voltage v rsm average rectified forward current (t c = 85 0 c) i f(av) non-repetitive peak surge current (surge applied at rated load conditions, halfwave, single phase, 60 hz i fsm thermal & mechanical specifications (t e = 25 parameters maximum thermal resistance, junction to case operating junction temperature range storage temperature mounting torque (non-lubricated threads) approximate allowable weight emiconductor ltd. schottky barrier rectifier diode do- 203ab (do c, unless otherwise noted) test conditions symbol i f = 30 a v f i f = 60 a i f = 120 a maximum instantaneous reverse current at rated dc v oltage t c = 25 0 c i r t c = 125 0 c c, unless otherwise noted) values units 45 v 54 v 60 a 600 a = 25 0 c, unless otherwise noted) symbol values r th(jc) t j - 65 to t stg - 65 to w 45.6 SD51 203ab (do -5) symbol values units 0.58 v 0.66 v 0.86 v 50 ma 125 ma values units 1.0 0 c/w 65 to +150 0 c 65 to +150 0 c 15 in-lb 45.6 g
naina s emiconductor emiconductor ltd. all dimensions in mm SD51
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